Influence of mid-infrared laser pulse width on in-band damage threshold of HgCdTe

Hu Weimin; Wang Xiaojun; Tian Changyong; Yang Jing; Liu Ke; Peng Qinjun

doi:10.11884/HPLPB202234.210321

Volume 34 Issue 1

Jan. 2022

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Hu Weimin, Wang Xiaojun, Tian Changyong, et al. Influence of mid-infrared laser pulse width on in-band damage threshold of HgCdTe[J]. High Power Laser and Particle Beams, 2022, 34: 011009. doi: 10.11884/HPLPB202234.210321

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Hu Weimin, Wang Xiaojun, Tian Changyong, et al. Influence of mid-infrared laser pulse width on in-band damage threshold of HgCdTe[J]. High Power Laser and Particle Beams, 2022, 34: 011009. doi: 10.11884/HPLPB202234.210321

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Influence of mid-infrared laser pulse width on in-band damage threshold of HgCdTe

doi: 10.11884/HPLPB202234.210321

Hu Weimin^{1, 3
,},
Wang Xiaojun^{1
,
,},
Tian Changyong¹,
Yang Jing¹,
Liu Ke¹,
Peng Qinjun^{1, 2}

1.
Key Laboratory of Solid State Lasers, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
2.
Key Laboratory of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
3.
University of Chinese Academy of Sciences, Beijing 100049, China

Received Date: 2021-07-26
Rev Recd Date: 2021-12-01

Available Online: 2021-12-10

Publish Date: 2022-01-15

Abstract

Abstract

To study the influence of pulse width on the damage threshold of HgCdTe material irradiated by mid-infrared in-band laser pulse, a one-dimensional model named self-consistent model is established. Some parameters including number density of carrier, carrier and energy current, temperature of carrier and lattice are calculated in the whole process. Damage thresholds of in-band single pulsed laser, whose wavelength is 2.85 μm and pulse width ranges from 30 ps to 10 ns, are obtained. The results show that, damage threshold rauge of in-band laser is 200−500 mJ/cm². Among them, the damage threshold of 300 ps to 3 ns laser pulses is about 200 mJ/cm², which is lower than that of other pulsed lasers. The validity of simulation model is verified by setting up the experimental devices and carrying out relevant experiments. Using a single pulsed laser with wavelength of 2.85 μm and pulse width of 300 ps as the light source, the damage threshold is about 200 mJ/cm². Under the same conditions, when 10 ns single laser pulse is used, the damage threshold is greater than 474 mJ/cm². The damage process of the HgCdTe material destroyed by hundred-picosecond pulsed laser combines thermal and optical breakdown effects, and its unique mechanism aggravates the destruction of material.
- laser radiation semiconductor,
- HgCdTe,
- damage threshold,
- self-consistent model,
- hundred-picosecond pulsed laser

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References(23)

References

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