Volume 34 Issue 12
Nov.  2022
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He Youhui, Chen Hongbin, Li Fei, et al. Effect of different nitrogen ion implantation parameters on surface charge accumulation and dissipation characteristics of polytetrafluoroethene[J]. High Power Laser and Particle Beams, 2022, 34: 125001. doi: 10.11884/HPLPB202234.220213
Citation: He Youhui, Chen Hongbin, Li Fei, et al. Effect of different nitrogen ion implantation parameters on surface charge accumulation and dissipation characteristics of polytetrafluoroethene[J]. High Power Laser and Particle Beams, 2022, 34: 125001. doi: 10.11884/HPLPB202234.220213

Effect of different nitrogen ion implantation parameters on surface charge accumulation and dissipation characteristics of polytetrafluoroethene

doi: 10.11884/HPLPB202234.220213
  • Received Date: 2022-08-01
  • Rev Recd Date: 2022-10-01
  • Available Online: 2022-11-02
  • Publish Date: 2022-11-02
  • To suppress the surface charge accumulation and improve the surface pressure resistance of polytetrafluoroethene (PTFE), the plasma immersion ion implantation was carried out on the surface of PTFE by radio frequency (RF) generation nitrogen plasma. The modification effect of PTFE sample surface was realized by changing RF power, pulse width and pulse amplitude during injection. X-ray photoelectron spectroscopy, surface morphology, surface resistivity, surface potential attenuation characteristics, surface trap energy level and density distribution were measured before and after injection. The effects of different injection parameters on surface composition, surface charge accumulation and dissipation characteristics of PTFE samples were systematically studied. The results show that nitrogen ions can achieve surface modification mainly through their own kinetic energy, rather than introducing new components through chemical reaction. The kinetic energy and quantity of nitrogen ions are the main factors determining the surface modification effect. With the increase of RF source power, nitrogen utilization efficiency of RF source is improved, the saturation point of treatment effect increases from 20 cm3/min at 100 W RF power to 30 cm3/min at 400 W RF power. The corresponding surface resistivity decreases from the maximum value $ 3.3\times {10}^{16}\;\mathrm{\Omega }/\mathrm{m}{\mathrm{m}}^{2} $ at 100 W-10 cm3/min to the minimum value $ 1\times {10}^{15}\;\mathrm{\Omega }/\mathrm{m}{\mathrm{m}}^{2} $ at 400 W-30 cm3/min, the surface charge dissipation rate increases from 6% to 68%. At the same time,the accumulation decreases by 18.6% at most. In addition, when the applied pulse voltage increases from 3 kV-25 μs to 7 kV-75 μs, The surface resistivity decreased by up to 89%, the surface charge dissipation rate increases from 4% to 58%, and the accumulation decreases by 23.7% at most. Further analysis shows that the trap energy level becomes shallow, which accelerates the surface charge debonding, and the reduced surface resistivity promotes the surface charge conduction along the surface of the debonding, and finally accelerates the surface charge dissipation.
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