EFFECTS OF DIELECTRONIC RECOMBINATION ON ELECTRON OCCUPATION NUMBER FOR NON LTE SYSTEM

wu zeqing; li shichang; han guoxing

Volume 10 Issue 01

Jan. 1998

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wu zeqing, li shichang, han guoxing. EFFECTS OF DIELECTRONIC RECOMBINATION ON ELECTRON OCCUPATION NUMBER FOR NON LTE SYSTEM[J]. High Power Laser and Particle Beams, 1998, 10.

Citation:

wu zeqing, li shichang, han guoxing. EFFECTS OF DIELECTRONIC RECOMBINATION ON ELECTRON OCCUPATION NUMBER FOR NON LTE SYSTEM[J]. High Power Laser and Particle Beams, 1998, 10.

wu zeqing, li shichang, han guoxing. EFFECTS OF DIELECTRONIC RECOMBINATION ON ELECTRON OCCUPATION NUMBER FOR NON LTE SYSTEM[J]. High Power Laser and Particle Beams, 1998, 10.

Citation:

wu zeqing, li shichang, han guoxing. EFFECTS OF DIELECTRONIC RECOMBINATION ON ELECTRON OCCUPATION NUMBER FOR NON LTE SYSTEM[J]. High Power Laser and Particle Beams, 1998, 10.

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EFFECTS OF DIELECTRONIC RECOMBINATION ON ELECTRON OCCUPATION NUMBER FOR NON LTE SYSTEM

1.
Institute of Applied Physics and Computational Mathematics;P.O.Box 8009;Beijing 100088.P.R.China

Publish Date: 1998-01-15

Abstract

Abstract

Dielectronic Recombination(DR) has been included in the solution of the rate equations in the average atom(AA) model. Employing the method proposed by Zao Libo and Li Shichang the DR rate coefficients was calculated. The results show that DR plays an important role in some cases in Al plasma and the average degree of ionization for Au plasma is sharply decreased after considering DR process.
- non lte,
- electron occupation nurnber,
- dielectronic recombination