Circuit simulation of GJB151B CS115 part П: The analysis of application

Cui Zhitong; Chen Wei; Dong Yayun; Nie Xin; Wu Wei; Liu Zheng

doi:10.11884/HPLPB202234.210499

Volume 34 Issue 6

Apr. 2022

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Cui Zhitong, Chen Wei, Dong Yayun, et al. Circuit simulation of GJB151B CS115 part П: The analysis of application[J]. High Power Laser and Particle Beams, 2022, 34: 063003. doi: 10.11884/HPLPB202234.210499

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Cui Zhitong, Chen Wei, Dong Yayun, et al. Circuit simulation of GJB151B CS115 part П: The analysis of application[J]. High Power Laser and Particle Beams, 2022, 34: 063003. doi: 10.11884/HPLPB202234.210499

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Circuit simulation of GJB151B CS115 part П: The analysis of application

doi: 10.11884/HPLPB202234.210499

State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi’an 710024, China

Received Date: 2021-11-19
Rev Recd Date: 2022-02-21

Available Online: 2022-03-01

Publish Date: 2022-06-15

Abstract

Abstract

To design the test setup and predict the effect of GJB151B CS115 “impulse excitation bulk cable injection conducted susceptibility”, we introduced the circuit model of inductive pulse current injection for different type of cables. The influences on the injected voltage/current caused by the factors of the test setup are simulated and analyzed. Some regularity characteristics of CS115 test setting are summarized, and the method of CS115 test design and optimization by circuit simulation is proposed.
- electromagnetic pulse,
- CS115,
- pulsed current injection,
- inductive coupling,
- circuit modeling

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References(11)

References

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