Total ionizing dose effect on gate drivers fabricated by BCD technology

Xu Shiping; Cui Jiangwei; Zheng Qiwen; Liu Gang; Xing Kangwei; Li Xiaolong; Shi Weilei; Wang Xin; Li Yudong; Guo Qi

doi:10.11884/HPLPB202537.240235

Volume 37 Issue 5

Mar. 2025

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Article Navigation > High Power Laser and Particle Beams > 2025 > 37(5): 054002

Xu Shiping, Cui Jiangwei, Zheng Qiwen, et al. Total ionizing dose effect on gate drivers fabricated by BCD technology[J]. High Power Laser and Particle Beams, 2025, 37: 054002. doi: 10.11884/HPLPB202537.240235

Citation:

Xu Shiping, Cui Jiangwei, Zheng Qiwen, et al. Total ionizing dose effect on gate drivers fabricated by BCD technology[J]. High Power Laser and Particle Beams, 2025, 37: 054002. doi: 10.11884/HPLPB202537.240235

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Total ionizing dose effect on gate drivers fabricated by BCD technology

doi: 10.11884/HPLPB202537.240235

Xu Shiping^{1, 2
,},
Cui Jiangwei^{1, 2
,
,},
Zheng Qiwen^{1, 2},
Liu Gang³,
Xing Kangwei³,
Li Xiaolong^{1, 2},
Shi Weilei^{1, 2},
Wang Xin^{1, 2},
Li Yudong^{1, 2},
Guo Qi^{1, 2}

1.
Xinjiang Key Laboratory of Extreme Environment Electronics, Key Laboratory of Functional Materials and Devices for Special Environmental Conditions, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
2.
University of Chinese Academy of Sciences, Beijing 100049, China
3.
Beijing YanDong Microelectronic Co., Ltd., Beijing 100176, China

Received Date: 2024-07-18
Accepted Date: 2025-01-15
Rev Recd Date: 2025-02-15

Available Online: 2025-04-30

Publish Date: 2025-03-31

Abstract

Abstract

The BCD technology integrates Bipolar, Complementary Metal Oxide Semiconductor (CMOS), and Double Diffused MOSFET (DMOS) within a single chip, widely utilized in electronic components and system production. Gate drivers fabricated by BCD technology can reduce transmission delays, lower power consumption, and enhance drive capabilities. However, the radiation effects in space environments may lead to performance degradation and potentially jeopardize the safety of spacecraft. This paper focuses on gate drivers based on BCD technology, employing an enclosed layout structure for total ionizing dose (TID) radiation hardening. Through TID irradiation tests, the electrical parameter variations between hardened and unhardened devices are compared. Results indicate that TID radiation causes degradation in the output voltage and current characteristics of the device, manifesting as a decrease in switching voltage and an increase in output current, while having a negligible impact on the output resistance. Comparing test outcomes from both types of drivers, it is evident that the ring-gate hardening method effectively mitigates edge leakage induced by TID radiation to a certain extent. Nevertheless, functional failure occurs in the devices at 500 krad(Si).
- BCD technology,
- gate driver,
- total ionizing dose effect,
- enclosed layout device

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References(19)

References

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