Research on the photoelectric conversion efficiency of vertical 4H-SiC photoconductive semiconductor switches

Li Fei; Huang Jia; Liu Jingliang; Hou Junjie; Chen Xiangjin

doi:10.11884/HPLPB202537.250131

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Li Fei, Huang Jia, Liu Jingliang, et al. Research on the photoelectric conversion efficiency of vertical 4H-SiC photoconductive semiconductor switches[J]. High Power Laser and Particle Beams. doi: 10.11884/HPLPB202537.250131

Citation:

Li Fei, Huang Jia, Liu Jingliang, et al. Research on the photoelectric conversion efficiency of vertical 4H-SiC photoconductive semiconductor switches[J]. High Power Laser and Particle Beams. doi: 10.11884/HPLPB202537.250131

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Research on the photoelectric conversion efficiency of vertical 4H-SiC photoconductive semiconductor switches

doi: 10.11884/HPLPB202537.250131

1.
The 13th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang 050057, China
2.
Science and Technology Research Institute of XJ Electric Co, Ltd, Xian 710000, China

Received Date: 2025-05-14
Accepted Date: 2025-07-22
Rev Recd Date: 2025-07-08

Available Online: 2025-07-25

Abstract

Abstract

Background
With the increasing demand for solid-state, modular, and miniaturized pulsed power systems, wide-band-gap photoconductive semiconductor switches (PCSSs) have attracted significant attention due to their high-power capacity and fast response characteristics.
Purpose
This study aims to develop a vertical PCSS on high-purity semi-insulating (HPSI) 4H-SiC substrate with an improved package structure to enhance laser energy utilization, while optimizing the pulse-forming circuit to minimize parasitic effects.
Methods
We fabricated vertical PCSSs on HPSI 4H-SiC substrates and proposed a novel package structure with a high reflector based on MgF₂/TiO₂ to improve laser energy utilization. And a slotted pulse-forming line structure is introduced to reduce parasitic inductance.
Results
Under 10 kV bias voltage with 532 nm laser excitation (500 ps pulse width, 90 μJ energy), the system generated 7.6 kV pulses across 50 Ω load with 620 ps rise time and 2.2 ns pulse width. The peak output power reached 1.1 MW with 7.7 dB photoelectric power gain.
Conclusions
The developed SiC PCSS with high-reflector package demonstrates enhanced laser energy utilization. The slotted pulse-forming line effectively reduces parasitic inductance, enabling high-power, fast-response performance suitable for compact pulsed power systems.
- photoconductive semiconductor switch,
- high-purity semi-insulating 4H-SiC,
- photoelectric conversion efficiency,
- peak output power,
- photoelectric power gain

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References(20)

References

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