The research on influence factors of high power GaN blue diode laser (LD) performance degradation

Pengfei Xie; Yonggang Zhang; Chengqian Wang; Wenqiang Lv; Deyong Wu; Linhui Guo; Jun Lei; Zhao Wang; Songxin Gao

doi:10.11884/HPLPB202537.250150

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Article Navigation > High Power Laser and Particle Beams > 2025 > Accepted Manuscript

Pengfei Xie, Yonggang Zhang, Chengqian Wang, et al. The research on influence factors of high power GaN blue diode laser (LD) performance degradation[J]. High Power Laser and Particle Beams. doi: 10.11884/HPLPB202537.250150

Citation:

Pengfei Xie, Yonggang Zhang, Chengqian Wang, et al. The research on influence factors of high power GaN blue diode laser (LD) performance degradation[J]. High Power Laser and Particle Beams. doi: 10.11884/HPLPB202537.250150

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The research on influence factors of high power GaN blue diode laser (LD) performance degradation

doi: 10.11884/HPLPB202537.250150

Pengfei Xie^{1, 2},
Yonggang Zhang^{1, 2},
Chengqian Wang^{1, 2},
Wenqiang Lv^{1, 2},
Deyong Wu^{1, 2},
Linhui Guo^{1, 2
,
,},
Jun Lei^{1, 2},
Zhao Wang^{1, 2},
Songxin Gao^{1, 2}

1.
Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang, Sichuan 621900
2.
National Key Laboratory of Science and Technology on Advanced Laser and High Power Microwave, China Academy of Engineering Physics, Mianyang, Sichuan 621900

Received Date: 2025-05-23
Accepted Date: 2025-10-05
Rev Recd Date: 2025-09-30

Available Online: 2025-11-08

Abstract

Abstract

Background
High power GaN-based blue diode lasers have wide application prospects in industrial processing, copper material welding, 3D printing, underwater laser communication and other technical fields. The Chip On Submount (COS unit) packaged in the heat sink is a kind of single component that can be applied to the fabrication of high power GaN-based blue diode lasers. The device has the advantages of low thermal resistance and small size.
Purpose
However, due to the low reliability of this device, the industrial application of this COS single component in high power GaN-based blue diode lasers is still limited to a certain extent, and its performance degradation factors need to be studied.
Methods
In this paper, based on the optical microscopy、scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) the degradation factors of high power blue light COS components were studied.
Results
Finally, the experimental study and analysis show that the performance degradation factors of blue light diode laser chip are mainly related to GaN matrix material defects, cavity surface surplus deposition and photochemical corrosion factors, and through experiments, it is compared that high power blue light COS single component can improve its reliability by hermetic packaging and provide a reference for the subsequent engineering application of high power blue COS units.
Conclusions
Finally, experimental research and analysis indicate that the performance degradation factors of high-power blue laser diodes (LDs) are primarily related to defects in the GaN substrate material, foreign matter deposition on the cavity surface, and photochemical corrosion factors. Comparative experiments further reveal that the threshold current growth rate of LDs with gas sealing (～0.14 mA/h) is lower than that of non-gas-sealed LDs (～0.27 mA/h). This demonstrates that gas-sealed packaging of high-power blue LD COS unit devices can enhance their reliability.
- GaN blue diode laser,
- performance degradation,
- diode laser packging,
- hermetic packaging,
- high power

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References(24)

References

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