Research on full-bridge bipolar pulsed current source based on parallel SiC MOSFETs

Shi Tianwei; Yue Xiaoming; Jiang Song; Li Zi; Wang Yonggang

doi:10.11884/HPLPB202638.250399

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Article Navigation > High Power Laser and Particle Beams > 2026 > Accepted Manuscript

Shi Tianwei, Yue Xiaoming, Jiang Song, et al. Research on full-bridge bipolar pulsed current source based on parallel SiC MOSFETs[J]. High Power Laser and Particle Beams. doi: 10.11884/HPLPB202638.250399

Citation:

Shi Tianwei, Yue Xiaoming, Jiang Song, et al. Research on full-bridge bipolar pulsed current source based on parallel SiC MOSFETs[J]. High Power Laser and Particle Beams. doi: 10.11884/HPLPB202638.250399

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Research on full-bridge bipolar pulsed current source based on parallel SiC MOSFETs

doi: 10.11884/HPLPB202638.250399

1.
School of Mechanical Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
2.
School of Mechanical Engineering, Shandong University, Ji’nan 250061, China

Received Date: 2025-11-04
Accepted Date: 2026-01-26
Rev Recd Date: 2026-02-07

Available Online: 2026-03-03

Abstract

Abstract

Background
High-power pulsed applications increasingly require power supplies capable of large-current bipolar output and flexible controllability. However, achieving high power density while maintaining pulse precision and current-sharing stability remains a significant challenge in pulse source design.
Purpose
This work aims to design and implement a compact, integrated bipolar pulsed current supply system that utilizes a paralleled Silicon Carbide (SiC) MOSFET full-bridge architecture to meet the demands of medium-voltage, high-power pulsed applications.
Methods
The proposed system integrates the main power stage, isolated drivers, auxiliary power supplies, and protection module on a single printed circuit board (PCB), featuring both high power density and scalability.
Results
Experimental results demonstrate that, under DC bus voltages from 50 V to 300 V, the peak output current exhibits excellent linear correlation with the bus voltage, while pulse-width adjustment enables continuously controllable peak current with a maximum enhancement of 37%. The system is capable of delivering bipolar pulse currents up to ±300 A, confirming the compatibility of high-current output with compact integration. In addition, at a 500$ \;ns $ pulse width, the four-device paralleled branch achieves a current-sharing imbalance factor of 12.87%, validating the effectiveness of the cooperative gate-drive scheme and the use of independent gate resistors.
Conclusions
These findings indicate that the proposed compact integrated design successfully balances large-current bipolar pulsed output and parameter adjustability, providing experimental evidence and design guidance for the miniaturization and engineering implementation of medium-voltage and high-power pulse sources.
- bipolar pulsed current source,
- SiC MOSFET paralleled connection,
- full-bridge topology,
- cooperative driving,
- high-current pulse output

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References(16)

References

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