Background With the increasing reliance on advanced electronics in space exploration, the vulnerability of semiconductor devices to cosmic radiation has become a critical issue. Traditional devices often suffer performance degradation due to radiation damage, compromising their reliability in high-radiation environments. FinFET technology, characterized by its ultra-scaled geometries and unique architecture, presents both advantages and challenges regarding radiation effects.
Purpose This study aims to examine the mechanisms of radiation damage in 30 nm bulk n-type FinFETs and their impact on FinFET-based 4T-SRAM circuits. By developing a simulation model to analyze leakage current pulse peak values under various heavy ion radiation conditions, we seek to quantify the effects of different radiation parameters on device performance and reliability.
Methods A Technology Computer-Aided Design (TCAD) model was created to simulate the response of n-type 30 nm bulk FinFETs subjected to heavy ion irradiation. Key factors such as linear energy transfer (LET), incidence angle, gate leakage, and incident radius were manipulated to determine their influence on leakage current.
Results The simulation results revealed that higher LET values, normal incidence angles, and smaller incident radii significantly increased leakage current pulse peak values during heavy ion irradiation, indicating a substantial vulnerability of FinFET devices. Moreover, the combined irradiation of heavy ions and gamma rays reduces the flipping voltage threshold in the SRAM circuits, thereby raising the likelihood of storage errors in the memory unit.
Conclusions The findings highlight the susceptibility of FinFET devices and circuits to radiation-induced damage, particularly in space environments. The increased leakage currents associated with specific radiation parameters suggest a pressing need for design strategies aimed at enhancing radiation tolerance. Furthermore, the observed reduction in voltage flip thresholds in SRAM under cooperative irradiation underscores the necessity for further exploration of error mitigation techniques in memory storage systems. This study contributes to the understanding of radiation interactions with advanced semiconductor technologies and emphasizes the importance of ensuring reliability in space electronics.
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