Volume 25 Issue 05
Mar.  2013
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Peng Jiying, Zheng Yi. Passively Q-switched mode locking in self-Raman Nd:YVO4 laser[J]. High Power Laser and Particle Beams, 2013, 25: 1097-1099. doi: 10.3788/HPLPB20132505.1097
Citation: Peng Jiying, Zheng Yi. Passively Q-switched mode locking in self-Raman Nd:YVO4 laser[J]. High Power Laser and Particle Beams, 2013, 25: 1097-1099. doi: 10.3788/HPLPB20132505.1097

Passively Q-switched mode locking in self-Raman Nd:YVO4 laser

doi: 10.3788/HPLPB20132505.1097
  • Received Date: 2012-09-06
  • Rev Recd Date: 2013-01-10
  • Publish Date: 2013-03-12
  • Based on the self-stimulated Raman scattering of Nd:YVO4 laser crystal, combined with Cr:YAG passive mode-locking technology and frequency doubling technology, compact 1176 nm and 588 nm yellow laser mode locking was realized. A folded laser cavity with three mirrors and an output coupler with 10% transmittance were designed in the laser diode end-pumped laser. The Nd3+ concentration and length of the Nd:YVO4 crystal were 0.2% and 10 mm, respectively, and the initial transmission of Cr:YAG at 1064 nm was 67%. At 10 W incident pump power the average output power was 123 mW and the duration of Q-switched envelope was only 6.0 ns with the mode-locked pulse repetition rate of 1.0 GHz. The average output power of 588.2 nm yellow laser was about 8 mW. An effective method for achieving mode-locked yellow lasers was provided.
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