Effect on substrate-film adherence of TiN film enhance d plasma nitriding

The combined process of low temperature plasma nitriding and TiN film deposition was realized on the plasma-assisted vacuum arc plating set. The process of plasma nitriding can be done below 2 00℃. The low temperature plasma nitriding and TiN film deposition was realized on the same device. By the SEM analysis of the plating structure, low hardness grads from the substrate to the film was obtained, and it was found that the mixed nitride plating formed at the interface between the substrate and the film. The quantitative measurement of substrate-film adherence showed that the adherence was improved notably by using the process. The adherence between film and substrate can reach to 59.6MPa without the bias voltage supplying.