Volume 12 Issue 05
Oct.  2000
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Article Contents

  • Publish Date: 2000-10-15
  • The ions trapped by beam potential well can cause beam instability in electron storage rings. It is important to study the mechanism and suppress method of the instability to increase the perform level of machine. In this paper, the simulation methods and results of ion-trapping instability using strong-strong model were introduced for the HLS ring. These results can be used to understand the phenomena observed in the HLS ring.
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    通讯作者: 陈斌, bchen63@163.com
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      沈阳化工大学材料科学与工程学院 沈阳 110142

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