Yang Hongqiong, Yang Jianlun, Wang Huifang. MODIFICATION OF GaAs PHOTOCONDUCTORS BY NEUTRON(ABOVE Cd)IRRADIAIONJ. High Power Laser and Partical Beams, 1994, 06(03): 430-436.
Citation:
Yang Hongqiong, Yang Jianlun, Wang Huifang. MODIFICATION OF GaAs PHOTOCONDUCTORS BY NEUTRON(ABOVE Cd)IRRADIAIONJ. High Power Laser and Partical Beams, 1994, 06(03): 430-436.
Yang Hongqiong, Yang Jianlun, Wang Huifang. MODIFICATION OF GaAs PHOTOCONDUCTORS BY NEUTRON(ABOVE Cd)IRRADIAIONJ. High Power Laser and Partical Beams, 1994, 06(03): 430-436.
Citation:
Yang Hongqiong, Yang Jianlun, Wang Huifang. MODIFICATION OF GaAs PHOTOCONDUCTORS BY NEUTRON(ABOVE Cd)IRRADIAIONJ. High Power Laser and Partical Beams, 1994, 06(03): 430-436.
MODIFICATION OF GaAs PHOTOCONDUCTORS BY NEUTRON(ABOVE Cd)IRRADIAION
This paper reported the modification of Gr-doped GaAs and undoped Ga As photoconductor by neutron(above Cadmium)-treated.The exporimental results showed that the relations of the response time,the sensitivity to particle,and the output current of photoconductors with neutron-treated flux and bias voltages of he detectors.
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