By making use of our own program mPND1D, which is used to model the behavior of semiconductor device, we calculated the nonlinear response of the silicon diode stimulated by a high power microwave source. In the code, we considered factors in the set of coupled nonlinear and stiff partial differential equations as many as we can. This set of equations for the electron and hole in a semiconductor of such eight equations as carrier continuity equations. Poison equation heat flow equation and so on.