gan kong yin, tang bao yin, wang xiao feng, et al. Research on IGBT solid state switchJ. High Power Laser and Partical Beams, 2002, 14(06).
Citation: gan kong yin, tang bao yin, wang xiao feng, et al. Research on IGBT solid state switchJ. High Power Laser and Partical Beams, 2002, 14(06).

Research on IGBT solid state switch

  • The experiments on the IGBT solid state switch for induction accelerator was carried out with two series 1.2kV, 75A IGBT (GA75TS120U). The static and dynamic balancing modules were carried out with metal oxide varistores, capacities and diodes in order to suppress the overvoltage during IGBT on and off. Experimental results show that IGBT solid state switch works very stable under the different conditions. It can output peak voltage 1.8kV, rise time 300ns, fall time 1.64μs waveforms on the loads. The simulation data using OrCAD are in accord with experimental results except the rise time.
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