li ping, liu guo-zhi, huang wen-hua, et al. The mechanism of HPM pulse-duration damage effect on semiconductor componentJ. High Power Laser and Partical Beams, 2001, 13(03).
Citation:
li ping, liu guo-zhi, huang wen-hua, et al. The mechanism of HPM pulse-duration damage effect on semiconductor componentJ. High Power Laser and Partical Beams, 2001, 13(03).
li ping, liu guo-zhi, huang wen-hua, et al. The mechanism of HPM pulse-duration damage effect on semiconductor componentJ. High Power Laser and Partical Beams, 2001, 13(03).
Citation:
li ping, liu guo-zhi, huang wen-hua, et al. The mechanism of HPM pulse-duration damage effect on semiconductor componentJ. High Power Laser and Partical Beams, 2001, 13(03).
The mechanism of HPM pulse-duration damage effect on semiconductor component
The mechanism of HPM pulse-duration damage effect on semiconductor component results from heat accumulation and diffusion process in the defect area. The experiential formulae of HPM pulse-duration damage effect in the range of whole pulse-duration, long pulse-duration as well as short pulse-duration are obtained, which agree with experiments and numerical simulation effect data very well.
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