200kV/100kA low jitter ring type field distortion switch
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li hong-tao,
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ding bo-nan,
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xie wei-ping,
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deng jian-jun,
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wang huo-ming,
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wang yu-juan,
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fu zhen,
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wan bu-yong,
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ren jing,
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meng wei-tao,
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gong de-sen,
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qin wei-dong,
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dai ying-min
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Abstract
This paper reported the results of the investigation of a 200kV/100kA low jtter low prefire probability ring rail field distortion switch. Its jitter was less than 2 ns when its working voltage was larger than 70% of selfbreakdown voltage. When its working voltage was greater than 85% of selfbreakdown voltage its jitter was less than 1ns if the mixture of Ar, N2 and SF6N2, SF6Ar in which the percentage of SF6 was less than 50% was used as dielectric. Its maxium derivation of selfbreakdown voltage was less than 4% of selfbreakdown voltage. It is a multichannel switch and the number of discharging channel was more than 3. The results of selfbreakdown and triggering experiments working with Ar, N2, SF6 and SF6N2, SF6Ar mixtures were introduced.
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