wu zeqing, li shichang, han guoxing. EFFECTS OF DIELECTRONIC RECOMBINATION ON ELECTRON OCCUPATION NUMBER FOR NON LTE SYSTEMJ. High Power Laser and Partical Beams, 1998, 10(01).
Citation:
wu zeqing, li shichang, han guoxing. EFFECTS OF DIELECTRONIC RECOMBINATION ON ELECTRON OCCUPATION NUMBER FOR NON LTE SYSTEMJ. High Power Laser and Partical Beams, 1998, 10(01).
wu zeqing, li shichang, han guoxing. EFFECTS OF DIELECTRONIC RECOMBINATION ON ELECTRON OCCUPATION NUMBER FOR NON LTE SYSTEMJ. High Power Laser and Partical Beams, 1998, 10(01).
Citation:
wu zeqing, li shichang, han guoxing. EFFECTS OF DIELECTRONIC RECOMBINATION ON ELECTRON OCCUPATION NUMBER FOR NON LTE SYSTEMJ. High Power Laser and Partical Beams, 1998, 10(01).
EFFECTS OF DIELECTRONIC RECOMBINATION ON ELECTRON OCCUPATION NUMBER FOR NON LTE SYSTEM
Dielectronic Recombination(DR) has been included in the solution of the rate equations in the average atom(AA) model. Employing the method proposed by Zao Libo and Li Shichang the DR rate coefficients was calculated. The results show that DR plays an important role in some cases in Al plasma and the average degree of ionization for Au plasma is sharply decreased after considering DR process.
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