Damage of bipolar junction transistor under electromagnetic pulse injected from different electrode

By the two-dimensional finite-difference time-domain simulation, the damage of bipolar junction transistor(BJT) under high power electromagnetic pulses was studied, considering the different response of BJT under the electro-magnetic pulse injected from different electrode. The possibility of burnout was analyzed according to the temperature concentration. The simulation results show that the emitter injection is easier to burnout the BJT than the collector injection, and the base injection is relatively difficult. The energy needed for burnout decreases with the magnitude of the pulse in the case of emitter injection, while it becomes independent of the magnitude that is higher than about 30 V. The energy needed for burnout increases with the magnitude of the pulse in the case of collecto