Experimental study of semiinsulating GaAs photoconductive switch triggered by infrared laser pulse

The semiinsulating GaAs photoconductive switches, whose deep energy defect is introduced by particle beam irradiation, are described. The experiments of two kinds of switches with the distance of 3mm and 8mm between two electrodes respectively, triggered by infrared laser pulse are reported, and the photon energy of the trigger laser is lower than the GaAs bandgap. The output electronic pulse whose repetition rates are 5kHz and 20MHz are observed when triggered by 900nm diode laser and 1 530nm optical fiber laser respectively. The semiinsulating GaAs photoconductive switch can operate in linear mode and nonlinear mode respectively, when they are switched at 3kV and 5kV and triggered by 1 064nm Nd:YAG laser with the energy of 1.9mJ. The experiments indicated the semiinsulating GaAs ph