Radiation-induced interface states of Si-SiO2 by intense pulse X-ray and their annealing

Intense pulse X-ray is used to irradiate Si-SiO2 interface. Density of Si-SiO2 interface states and its annealing process are measured. Experiment results show that radiation-induced interface traps in Si-SiO2 are increased with dose of intense pulse X-ray. A distribution that density of Si-SiO2 interface states vs. radiation dose is summarized. According to this distribution, radiation impairment effects and mechanism are discussed. Intense pulse X-ray radiation appear following characteristics: (1) Interface states induced by intense radiation are easily saturated. This saturation phenomenon is different from that of common dose radiation. (2) Annealing process shows that the more radiation-induced interface states, the more rapid eliminate these states in annealing process. (3) There ex