Latent failure of 2SC3356 caused by electrostatic discharge

Latent failure study on the low-level human body model(HBM) electrostatic discharge(ESD) stresses on microelectric device was presented. The low-level ESD stresses were imposed on microwave low noise transistor 2SC3356 using the HBM from CB (collector-base) junctions and EB (emitter-base) junctions. It is shown that the CB junctions are more sensitive than the EB junctions, of the latent failure on 2SC3356 caused by low-level ESD and that high temperature (≥125 ℃) life tests bring about annealing effects and relief the latent defects caused by low-level ESD stresses.