wang cong-juan, jin yun-xia, shao jian-da, et al. Characteristics of hafnium oxide deposited by reactive ion-assisted depositionJ. High Power Laser and Partical Beams, 2007, 19(12).
Citation: wang cong-juan, jin yun-xia, shao jian-da, et al. Characteristics of hafnium oxide deposited by reactive ion-assisted depositionJ. High Power Laser and Partical Beams, 2007, 19(12).

Characteristics of hafnium oxide deposited by reactive ion-assisted deposition

  • HfO2 films have been deposited by electron beam evaporation of hafnium oxide, reactive evaporation without ion beam assistance and reactive ion beam assisted deposition(RIBAD). Optical and structural properties and laser-induced damage threshold(LIDT) of the films have been studied. It is found that HfO2 film deposited with reactive deposition has less defects and good uniformity. The sample deposited by RIBAD has higher refraction index, and can reduce absorption at a certain condition, but it LIDT is under improvement. The crystal structure of the sample deposited with RIBAD is monoclinic, and when the bombardment energy rises, the preferred orientation changes from (002) to (-111).
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