Optical properties of TiO2 film after annealing in nitrogen

In order to prepare nitrogen-doped TiO2 film in the surface of SiO2 glass, Ti ion implantation was performed at room temperature in fused silica and then the as-implanted samples were annealed in nitrogen ambient up to 900 ℃. SRIM code and Rutherford backscattering spectrometry(RBS) showed a Gauss distribution of Ti ions in the surface of as-implanted samples. The experimental profile of Ti ions is consistent with the simulated one. X-ray photoelectron spectroscopy(XPS) indicated that metallic Ti and TiO2 coexisted in the as-implanted samples. After annealing at 900 ℃, metallic Ti was oxidized into TiO2, and a new compound of O－Ti－N formed because a small amount of oxygen atoms were substituted by nitrogen atoms in the lattice of TiO2. UV-Vis spectra indicated that the optical absorpti