Hole-net structure and photoluminescence emission monocrystalline on silicon irradiated by laser

A kind of hole-net structure can be formed on silicon sample irradiated by pulse laser with power of 0.5 J·s-1·cm-2 and wavelength of 1 064 nm. The photoluminescence(PL) emission is enhanced by the hole-net structure. The PL peak center is about 700 nm. The oxidation-free silicon sample almost does not emit, which proves that oxidation of silicon may be most important in enhancing PL emission. The quantum confinement-luminescence center model is used to explain the increasing PL emission in the hole-net structure. The plasma wave model is used to explain the forming mechanism of hole-net structure. Under the optimum conditions in preparing process, the sample with enhanced PL emission and more stable low-dimensional structures can be obtained by 9 s irradiation.