Meaurement of lattice strain induced by ion implantation using Raman spectroscopy

The weak damage induced by 0.28 MeV Zn+ ion implantation was studied in AlAs/GaAs and GaAs/Ga0.92In0.08. As superlattice samples using Raman spectroscopy. The variation of the average strain in the implanted layers with the implantation dose was evaluated. It was found that the strain levels caused by ion implantation in the dose range of 5×1013 cm－2 to 5×1014 cm－2 were lower than the reported maximum un-relaxed strain of bulk GaAs. It was shown that the lattice strain caused by ion implantation had become saturated at high implantation doses,indicating that the defect emergence and recombination had reached equilibrium and resulted in a uniform strain field．