liu xin, liu jin-yuan, yang fang, et al. High-voltage pulse generation with MOSFETJ. High Power Laser and Partical Beams, 2008, 20(12).
Citation: liu xin, liu jin-yuan, yang fang, et al. High-voltage pulse generation with MOSFETJ. High Power Laser and Partical Beams, 2008, 20(12).

High-voltage pulse generation with MOSFET

  • Based on high-speed MOSFET switches, the dual ultrafast high voltage pulses are generated with the inductive adder circuit topology. The pulses’ half-width is 300 ns, the rise time is about 60 ns and the time interval between two pulses is 600 ns. The peak pulse current could be 365 A for a load of 11.5 Ω and the corresponding output peak pulse power is 1.5 MW.
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