Transient radiation effects of CMOS circuits with different pulse widths

Transient radiation response on CMOS circuits were investigated for different pulse widths. CMOS circuits 4007, 4069 and 6264 were irradiated using “Qiangguang-I” accelerator source. Latchup thresholds of CMOS inverters and upset level of CMOS SRAM with different pulse widths were obtained. The data clearly indicate dose-rate dependency on the pulse widths. The latchup threshold for 4007 and 4069 at 20 ns pulse width is 2 times that at 150 ns. The upset level for 6264 at 20 ns pulse width is 3 times that at 150 ns. The results show that the damage thresholds decrease with the increase of pulse widths．