li junna, xue binjie, jia wei, et al. Design of 3 MV UV illumination switchJ. High Power Laser and Partical Beams, 2009, 21(08).
Citation: li junna, xue binjie, jia wei, et al. Design of 3 MV UV illumination switchJ. High Power Laser and Partical Beams, 2009, 21(08).

Design of 3 MV UV illumination switch

  • A UV illuminated switch of three sections in series was designed based on UV illumination technology and capacitance-resistance coupling circuit. The switch consists of UV illumination gap and self-breakdown gaps. The distance of self-breakdown gap was calculated based on the experimental data of same switch under pulse with 240 ns risetime. The nonuniform factor of self-breakdown gap is 1.58. The step shield of outer cylinder was used to get the surface field no more than 50 kV/cm. The voltage of UV illumination gap was designed as about 1% of the voltage of self-breakdown gap. It was indicated that the voltage of UV illumination gap is higher than breakdown voltage of rod-rod electrode within 0.1~0.7 MPa.
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