Pulse-width dependent radiation effects on electronic components

Mechanism of pulse-width effects on electronic components is described. The relationship of pulse-width and radiation response is presented. Five types of devices are tested under three different pulse-widths(about 20 ns,50 ns,150 ns) of different simulative radiation sources, the dose rate is about 106 to 109 Gy(Si)/s. The experiment results are analysed and discussed. The differences of radiation response under different pulse-widths are compared. It is shown that radiation effects are strongly influenced by pulse-width. Under the same radiation dose rate, longer γ pulse-width brings longer radiation storage time and stronger radiation response to devices. Discrete device is more obviously influenced by pulse-width than integrated circuit.