guo xiaoqiang, guo hongxia, wang guizhen, et al. Low-energy neutron-induced single-event upsets in static random access memory[J]. High Power Laser and Particle Beams, 2009, 21.
Citation:
guo xiaoqiang, guo hongxia, wang guizhen, et al. Low-energy neutron-induced single-event upsets in static random access memory[J]. High Power Laser and Particle Beams, 2009, 21.
guo xiaoqiang, guo hongxia, wang guizhen, et al. Low-energy neutron-induced single-event upsets in static random access memory[J]. High Power Laser and Particle Beams, 2009, 21.
Citation:
guo xiaoqiang, guo hongxia, wang guizhen, et al. Low-energy neutron-induced single-event upsets in static random access memory[J]. High Power Laser and Particle Beams, 2009, 21.
The visual analysis method of data process was provided for neutron-induced single-event upset(SEU) in static random access memory(SRAM). The SEU effects of six CMOS SRAMs with different feature size (from 0.13 μm to 1.50 μm) were studied. The SEU experiments were performed using the neutron radiation environment at Xi’an pulsed reactor. And the dependence of low-energy neutron-induced SEU cross section on SRAM’s feature size was given. The results indicate that the decreased critical charge is the dominant factor for the increase of single event effect sensitivity of SRAM devices with decreased feature size. Small-sized SRAM devices are more sensitive than large-sized ones to single event effect induced by low-energy neutrons.
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