Design of high current narrow width pulsed power supply of laser diode

The principle of high power MOSFET generating high-current narrow-width pulses to drive laser diode is theoretically analyzed, and the formula of MOSFET gate drive current and the estimation formula of MOSFET drive rise time are obtained. The key factors which influence the laser diode(LD) power supply current width, amplitude and oscillation are summarized through simulation. Theory and simulation show that components stray inductance, circuit routing inductance and load inductance influence the drive current greatly. Experiment results show that the MOSFET switch-on time is about 2 ns at the drain-source voltage of 200 V. The LD drive power supply’s pulse current possesses a rise-time less than 10 ns, with the pulse width, amplitude and frequency ranging in 15～100 ns， 0～50 A and 0～5