Application of random coupling model to high power microwave effects

The statistical nature(probability density function) of the induced voltages at key points within the wave-chaotic scattering cavity was discussed. The applications of random coupling model(RCM) in the high power microwave(HPM) effects and electromagnetic compatibility were introduced. The practicability of RCM-based calculation has been validated by measuring the magnitudes of induced voltages at key points within the computer cavity. It shows that the calculated and experimental results are basically the same, offering a new method for electromagnetic compatibility and HPM effects research.