High power high duty-cycle 808 nm wavelength laser diode

808 nm high duty-cycle high power semiconductor laser array was studied. Gradient refraction index separate confinement hetero-structure single quantum well broad waveguide structure(GRIN-SCH-SQW-BW) was adopted to reduce the non-radiation compound, the active layer carrier leakage, and the scattering and absorption loss. Meanwhile, it enables high doping of the P side and optimization of N side alloy conditions,which reduce the laser diode series resistance, thereby reduce the joule heat and raise the output power of the laser diode. GaInAsP/InGaP/AlGaAs GRIN-SCH-SQW-BW epilayers were grown by low pressure metal organic chemical vapor deposition(MOCVD) on N-type GaAs substrate. laser diode array was fabricated using the material. The output power of laser diode array is up to 189.64 W at