Design of 808 nm high power diode laser bars

Laser bars with 808 nm wavelength are designed and fabricated based on GaAs/AlGaAs graded-index waveguide separate confinement hetero structure single quantum well chip. The enhancement in output power, electro-optical conversion efficiency, slope efficiency and spectral properties has been observed in the laser bars with ridge tops and recesses, which can limit the injection current into the active region. The restrictions in lateral diffusion of the current are enhanced with the deepening of the recess, thus improving the electro-optical properties of the bars．