Application of strained InGaAs/GaAs quantum-well to laser emitting at 1 054 nm

An InGaAs/GaAs strained quantum-well was prepared by metal-organic chemical-vapor deposition(MOCVD) on GaAs substrate. The growth condition was chosen and a strained buffer layer(SBL) was adopted during the growth. A quantum-well emitting at 1 054 nm was prepared laser with tilted waveguide. The strained QW laser exhibited threshold current of 9 mA and slope efficiency of 0.4W/A (unused antireflection coating on the facets). The 1 054 nm spectral width of the strained QW laser was 1.6 nm at an injection current of 50 mA. The experimental results indicate: The optimized growth condition and the used strained buffer layer are propitious to significantly improve the laser performance, and the application of strained InGaAs/GaAs quantum-well to laser emitting at 1 054 nm is successful．