Growing of 2.3 μm InGaAsSb/AlGaAsSb multi-quantum-well via AlSb buffers

GaSb-based InGaAsSb/AlGaAsSb multi-quantum-wells structure are designed and grown by molecular beam epitaxy(MBE). Characterization of the layers by X-ray diffraction and photoluminescence has been performed. The results showed that the epilayer has high uniformity and quality. AlSb buffer layer can reduce free energy between substrate and epilayer, thus it works as filter to restrain the dislocations. At room temperature, the emission spectra are centered at about 2.3 μm．