Plasma spectrum analysis of monocrystalline silicon irradiated by pulsed laser

Based on the theory of interaction between laser and material, we analyze thermal characteristics of pulsed laser irradiated monocrystalline silicon. By setting up experiment equipment including a laser lamp-house, the laser wavelength is 1 064 nm, the pulse-width is 10 ns and the repetition frequency is 1 Hz, we get the plasma and the thermal radiation spectrum of the monocrystalline silicon. We theoretically analyze the high temperature surface damnification of monocrystalline silicon according to its optical-electrical characters. After analysing waveband of the plasma spectrum of monocrystalline silicon in 380~460 nm, we find out the corresponding relation between the export frequency density of the laser and the comparative intensity of the three spectral lines, SiⅠ 390.52 nm, SiⅡ38