Influence of laser pulse shape on surface temperature of Si-target

Numerical simulation was applied to the study of femto/ picosecond laser-target interaction by two-temperature equation with proper initial and boundary conditions. The influence of laser pulse shapes on the carrier and lattice temperatures on the surface of Si-target was investigated. The results indicate that the main factor of temperature increasing is laser pulse power density. Pulse shapes: significantly effect the temperature distribution of the carriers on the Si-target surface, the temperature peak for rectangle pulses is the largest, and the temperature peak of Guassian pulses is the smallest. The conclusions are the theoretical basis of preparing excellent thin films.