Non-symmetric magnetic mirror field ECR oxygen plasma etching CVD diamond films

The ion parameters, electronic parameters and its spatial distribution were measured respectively by ion-sensitive probe and double Langmuir probe on a non-symmetric magnetic mirror field ECR plasma apparatus. The effects of gas pressure on plasma parameters and the spatial distribution were analyzed. The etching of CVD diamond thick films was accomplished by the ECR plasma under optimized pressure conditions and the etching mechanism is studied. The results showed that the electronic temperature was 5～10 eV, the ion temperature was about 1 eV and the electron density was in the order of 1010 cm-3. With the increasing of gas pressure, the electron density increased firstly and then decreased, the temperature of the electron and ion gradually decreased. The spatial distribution of plasma d