Preparation of nano TiO₂ thin films by plasma-enhanced chemical vapor deposition method

Nano TiO2 thin film produced by plasma-enhanced chemical vapor deposition method are deposited on the silicon substrate with the mixture of TiCl4 sources, argon and oxygen gases. Some technological parameters affecting the film performances are discussed. The results indicate that the surface of TiO2 film is even, its crystal structure is compact and the smallest crystal grain size is approximately 15 nm. The film crystal form change mainly relies on the deposition temperature. The film is amorphous for temperature lower than 300 ℃ and shows the anatase structure above the deposition temperature of 300 ℃.