Numerical simulation of semiconductor opening switch with circuit-fluid coupled model

In order to investigate the nanosecond current interruption mechanism of semiconductor opening switch (SOS) with a doping profile of p+-p-n-n+ structure, a 1D circuit-fluid coupled model was developed by deriving a current-voltage relation expression from the fluid mechanics equations and the total current density equation. The model simultaneously solves the external circuit equations and the internal fluid mechanics equations of SOS. Numerical results show the evolution of carrier density distribution and electric field in the SOS during the nanosecond pulse opening process. At the beginning of the process, the carrier density in the n-n+ boundary first dropped obviously with a high electric field yield and similar phenomena occurred in the p+-