liu zengyi, lin zulun, wang xiaoju, et al. Characteristics of lanthanum hexaboride thin film cathode deposited on large area substrateJ. High Power Laser and Partical Beams, 2011, 23(04).
Citation: liu zengyi, lin zulun, wang xiaoju, et al. Characteristics of lanthanum hexaboride thin film cathode deposited on large area substrateJ. High Power Laser and Partical Beams, 2011, 23(04).

Characteristics of lanthanum hexaboride thin film cathode deposited on large area substrate

  • The lanthanum hexaboride (LaB6) thin film cathode was deposited on large-area glass substrate and Ta substrate by the method of electron-beam deposition under the substrate temperature of 250 ℃ and the vacuum of 2×10-4 Pa. The deposited LaB6 thin films are predominantly (100)-oriented. The lattice displacement between LaB6 film and the LaB6 bulk target is minimal and the crystal size is relatively small at 45° deposition. Theoretically, the LaB6 film deposited at 45° has the possibility of forming low stress contact on different substrates. The work function of the LaB6 film cathode was measured to be 2.56 eV, which also proves the (100)-oriented growth of LaB6 films.
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