huang qiushi, li haochuan, zhu jingtao, et al. Stress analysis of W, WSi2, Si single layers and W/Si, WSi2/Si ultilayers fabricated by magnetron sputteringJ. High Power Laser and Partical Beams, 2011, 23(06).
Citation: huang qiushi, li haochuan, zhu jingtao, et al. Stress analysis of W, WSi2, Si single layers and W/Si, WSi2/Si ultilayers fabricated by magnetron sputteringJ. High Power Laser and Partical Beams, 2011, 23(06).

Stress analysis of W, WSi2, Si single layers and W/Si, WSi2/Si ultilayers fabricated by magnetron sputtering

  • A series of W, WSi2, Si thin films and W/Si, WSi2/Si periodic multilayers were fabricated by using DC magnetron sputtering technology. Surface profiles before and after deposition were measured with a stylus profiler and the stresses were calculated. The results indicate that W thin films show relatively large compressive stress, while W/Si multilayers show tensile stress. Both WSi2 thin films and WSi2/Si periodic multilayers show compressive stress. WSi2/Si periodic multilayers have the most stable stress state with no sharp change, and is a good material combination for X-ray multilayer optics with a large number of bilayers.
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