zhang haiwei, shi xiaowei, xu le, et al. Design and test scheme of high power PIN limitersJ. High Power Laser and Partical Beams, 2011, 23(11).
Citation: zhang haiwei, shi xiaowei, xu le, et al. Design and test scheme of high power PIN limitersJ. High Power Laser and Partical Beams, 2011, 23(11).

Design and test scheme of high power PIN limiters

  • A high power passive limiter based on PIN diode is presented. The main factors affecting its performance, such as power capability, limiting levels, peak leaking, response time, and recovery time, are presented. A passive PIN limiter using Schottky detection and an active limiter are realized based on microstrip line. The simulated results indicate that the threshold level and the limiting level of the passive limiter are about -3 dBm and 15 dBm, respectively, and it can withstand peak pulses of about 60 dBm. A high power measurement platform is established to measure the performance of the designed limiters. High isolation between high power signal and small signal is obtained using dual-band dual-path coupling method so that periodic pulsed and continuous wave high power measurement can
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