Initial study on fabrication of innerSi-doped polystyrene capsules

Inner-Si-doped polystyrene capsules are required to meet the demand of characterization of implosion interface. With dimethyldiethoxysilane (DMDES) as silicon donor, an encapsulation method is used to fabricate the inner-Si-doped polystyrene capsules. Noncontact X-radiography and X-spectrum analysis indicate that the resultant capsules appear with Si content at inner surface much higher about 2~3 order than that at outer surface and thickness of Sidoped layer less than 0.3μm．