Shan Yusheng, Wang Naiyan, Ceng Naigong, et al. DESIGN AND ADJUSTMENT OF A 100 LEVEL KrF EXCIMER LASERJ. High Power Laser and Partical Beams, 1993, 05(01): 5-15.
Citation: Shan Yusheng, Wang Naiyan, Ceng Naigong, et al. DESIGN AND ADJUSTMENT OF A 100 LEVEL KrF EXCIMER LASERJ. High Power Laser and Partical Beams, 1993, 05(01): 5-15.

DESIGN AND ADJUSTMENT OF A 100 LEVEL KrF EXCIMER LASER

  • A 100-J KrF laser facility is introduced in this paper.The Marx and diode voltages are 1.1MV and 620kV, respectively, with a diode current of 160kA and e- beam energy of 8kJ. The total gas pressure is 0.25MPa (F2 : Kr : Ar = 0.4 : 10 : 89.6). The reflectivities of the laser cavity mirrors are 96% and 25%, respectively.
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