ge zhao-yun, lin li-bin. I-V Curve of GaAs photoconduction detector irradiated by double beams of proton[J]. High Power Laser and Particle Beams, 2004, 16.
Citation:
ge zhao-yun, lin li-bin. I-V Curve of GaAs photoconduction detector irradiated by double beams of proton[J]. High Power Laser and Particle Beams, 2004, 16.
ge zhao-yun, lin li-bin. I-V Curve of GaAs photoconduction detector irradiated by double beams of proton[J]. High Power Laser and Particle Beams, 2004, 16.
Citation:
ge zhao-yun, lin li-bin. I-V Curve of GaAs photoconduction detector irradiated by double beams of proton[J]. High Power Laser and Particle Beams, 2004, 16.
We measure dark current, photocurrent of GaAs detector before and after proton radiation with the energy of 7.5MeV and 20MeV.The result shows that when GaAs detectors are irradiated by proton with the energy of 7.5MeV, its resistance increases, and additional conduction decrease with the dose of proton increases. This phenomenon is especially evidence when GaAs detectors are irradiated both by the energy of 20MeV and 7.5MeV proton. We analyze this phenomena and dope out some properties of this kind of detector．
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