Production of a-CH films by hollow cathode discharge plasma chemical vapor deposition

This paper describes the principle of plasma chemical vapor deposition (CVD) for fabrication amorphous CH films and factors which influence the deposition rate. The results show that the substrate distance must be more than 0.5cm. But with the increasing of the substrate distance and the H2 flow (that is to say, the CH4 content reduses), the deposition rate reduses. When DC voltage is 550V, the deposition rate has a maximum value. By examining the structures and optical properties of a-CH films using atomic force microscopy(AFM) and UV-VIS spectrum, it is indicated that a-CH films grown by means of the hollow cathode discharge plasma CVD are endowed with dense structure, and low-rough surfaces. The rough degree of surface is approximately 10nm. These a-CH films are suitable to be used as I