Lu Qisheng, Jiang Zhiping, Liu Zejin. THE TANSIENT BEHAVIOR OF InSb (PV) DETECTOR IRRADIATED BY LASERJ. High Power Laser and Partical Beams, 1991, 02(01): 102-108.
Citation:
Lu Qisheng, Jiang Zhiping, Liu Zejin. THE TANSIENT BEHAVIOR OF InSb (PV) DETECTOR IRRADIATED BY LASERJ. High Power Laser and Partical Beams, 1991, 02(01): 102-108.
Lu Qisheng, Jiang Zhiping, Liu Zejin. THE TANSIENT BEHAVIOR OF InSb (PV) DETECTOR IRRADIATED BY LASERJ. High Power Laser and Partical Beams, 1991, 02(01): 102-108.
Citation:
Lu Qisheng, Jiang Zhiping, Liu Zejin. THE TANSIENT BEHAVIOR OF InSb (PV) DETECTOR IRRADIATED BY LASERJ. High Power Laser and Partical Beams, 1991, 02(01): 102-108.
THE TANSIENT BEHAVIOR OF InSb (PV) DETECTOR IRRADIATED BY LASER
Experimental curves of the open circuit voltage of an InSb(PV) detector versus time irradiation of laser are given. Some theoretical analyses are carried out and good agreement with our experiments is obtained.
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